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NTZD3154N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage Tem-
perature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
?
20
?
?
14
?
?
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 16 V
T J = 25 ° C
T J = 125 ° C
?
?
?
?
1.0
5.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 4.5 V
?
?
" 5.0
m A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain ? to ? Source On Resistance
V GS(TH)
V GS(TH) /T J
R DS(on)
V GS = V DS , I D = 250 m A
?
V GS = 4.5 V, I D = 540 mA
V GS = 2.5 V, I D = 500 mA
0.45
?
?
?
?
2.0
0.4
0.5
1.0
?
0.55
0.7
V
mV/ ° C
W
V GS = 1.8 V, I D = 350 mA
?
0.7
0.9
Forward Transconductance
g FS
V DS = 10 V, I D = 540 mA
?
1.0
?
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
?
80
150
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz, V DS = 16 V
?
?
13
10
25
20
Total Gate Charge
Q G(TOT)
?
1.5
2.5
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V; I D = 540 mA
?
?
?
0.1
0.2
0.35
?
?
?
SWITCHING CHARACTERISTICS, V GS = V (Note 4)
Turn ? On Delay Time
t d(ON)
?
6.0
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DD = 10 V, I D = 540 mA,
R G = 10 W
?
?
?
4.0
16
8.0
?
?
?
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 350 mA
T J = 25 ° C
T J = 125 ° C
?
?
0.7
0.6
1.2
?
V
Reverse Recovery Time
t RR
V GS = 0 V, d ISD /d t = 100 A/ m s, I S = 350 mA
?
6.5
?
ns
2. Surface ? mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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